Toshiba to Start Sales of GaN-on-Silicon White LED Packages

Toshiba has started sales of gallium nitride on silicon white LED packages that are being marketed as a cost-competitive alternative to current LED packages. Production of LED chips is typically done on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, Inc. have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which Toshiba has brought to production at Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan.

The newly available Leteras LEDs comes in a 1-Watt, 6450 package. Other Leteras LEDs in 3535, 3030, and 3014 packages are under development. The newly available Leteras LED packages (part number TL1F1-NW0,L) come in color temperatures of 3000, 4000, and two in 5000K. They measure 6.4mm by 5.0 mm. At 350mA and 2.9 volts they have a luminous flux of 85, 95, 100, and 112 lumens respectively . The packages have a 120 degree viewing angle. The LEDs have a color rending index minimum Ra of 80 except for the higher lumen output version at 5000K that has a minimum Ra of 70. Toshiba says that the white LED packages are for general purpose lighting, TV backlighting and other areas of application.